Publicaciones en las que colabora con C. Gaquière (7)

2010

  1. High temperature stability of nitride-based power HEMTs

    4th Microwave and Radar Week, MRW-2010 - 18th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2010 - Conference Proceedings

  2. Testing the temperature limits of GaN-based HEMT devices

    IEEE Transactions on Device and Materials Reliability, Vol. 10, Núm. 4, pp. 427-436

  3. Thermal oxidation of lattice matched InAlN/GaN heterostructures

    Physica Status Solidi (C) Current Topics in Solid State Physics

2009

  1. Above 500 °C Operation of InAlN/GaN HEMTs

    Device Research Conference - Conference Digest, DRC

  2. InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess

    IEEE Electron Device Letters, Vol. 30, Núm. 11, pp. 1131-1133

2007

  1. Barrier layer downscaling of InAlN/GaN HEMTs

    65th DRC Device Research Conference

  2. Characteristics of Al2O3/AlInN/GaN MOSHEMT

    Electronics Letters, Vol. 43, Núm. 12, pp. 691-692