Mato
Knez
Group Leader
Institute of Electronics, Microelectronics and Nanotechnology
Villeneuve-d'Ascq, FranciaPublicaciones en colaboración con investigadores/as de Institute of Electronics, Microelectronics and Nanotechnology (2)
2007
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Barrier layer downscaling of InAlN/GaN HEMTs
65th DRC Device Research Conference
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Characteristics of Al2O3/AlInN/GaN MOSHEMT
Electronics Letters, Vol. 43, Núm. 12, pp. 691-692