Institute of Electronics, Microelectronics and Nanotechnology-ko ikertzaileekin lankidetzan egindako argitalpenak (2)

2007

  1. Barrier layer downscaling of InAlN/GaN HEMTs

    65th DRC Device Research Conference

  2. Characteristics of Al2O3/AlInN/GaN MOSHEMT

    Electronics Letters, Vol. 43, Núm. 12, pp. 691-692