Publicaciones en colaboración con investigadores/as de University of Lille Nord de France (3)

2010

  1. Thermal oxidation of lattice matched InAlN/GaN heterostructures

    Physica Status Solidi (C) Current Topics in Solid State Physics

2009

  1. Above 500 °C Operation of InAlN/GaN HEMTs

    Device Research Conference - Conference Digest, DRC

  2. InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess

    IEEE Electron Device Letters, Vol. 30, Núm. 11, pp. 1131-1133