Role of Surface Reduction in the Formation of Traps in n-Doped II-VI Semiconductor Nanocrystals: How to Charge without Reducing the Surface
- Du Fossé, I.
- Ten Brinck, S.
- Infante, I.
- Houtepen, A.J.
ISSN: 1520-5002, 0897-4756
Argitalpen urtea: 2019
Alea: 31
Zenbakia: 12
Orrialdeak: 4575-4583
Mota: Artikulua