Role of Surface Reduction in the Formation of Traps in n-Doped II-VI Semiconductor Nanocrystals: How to Charge without Reducing the Surface
- Du Fossé, I.
- Ten Brinck, S.
- Infante, I.
- Houtepen, A.J.
ISSN: 1520-5002, 0897-4756
Year of publication: 2019
Volume: 31
Issue: 12
Pages: 4575-4583
Type: Article