Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited SiNx masks

  1. Hertkorn, J.
  2. Lipski, F.
  3. Brückner, P.
  4. Wunderer, T.
  5. Thapa, S.B.
  6. Scholz, F.
  7. Chuvilin, A.
  8. Kaiser, U.
  9. Beer, M.
  10. Zweck, J.
Revue:
Journal of Crystal Growth

ISSN: 0022-0248

Année de publication: 2008

Volumen: 310

Número: 23

Pages: 4867-4870

Type: Article

DOI: 10.1016/J.JCRYSGRO.2008.07.075 GOOGLE SCHOLAR