Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited SiNx masks

  1. Hertkorn, J.
  2. Lipski, F.
  3. Brückner, P.
  4. Wunderer, T.
  5. Thapa, S.B.
  6. Scholz, F.
  7. Chuvilin, A.
  8. Kaiser, U.
  9. Beer, M.
  10. Zweck, J.
Aldizkaria:
Journal of Crystal Growth

ISSN: 0022-0248

Argitalpen urtea: 2008

Alea: 310

Zenbakia: 23

Orrialdeak: 4867-4870

Mota: Artikulua

DOI: 10.1016/J.JCRYSGRO.2008.07.075 GOOGLE SCHOLAR