Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited SiNx masks

  1. Hertkorn, J.
  2. Lipski, F.
  3. Brückner, P.
  4. Wunderer, T.
  5. Thapa, S.B.
  6. Scholz, F.
  7. Chuvilin, A.
  8. Kaiser, U.
  9. Beer, M.
  10. Zweck, J.
Journal:
Journal of Crystal Growth

ISSN: 0022-0248

Year of publication: 2008

Volume: 310

Issue: 23

Pages: 4867-4870

Type: Article

DOI: 10.1016/J.JCRYSGRO.2008.07.075 GOOGLE SCHOLAR