Resistive switching dependence on atomic layer deposition parameters in HfO2-based memory devices

1. Zazpe, R.
2. Ungureanu, M.
3. Golmar, F.
4. Stoliar, P.
5. Llopis, R.
6. Casanova, F.
7. Pickup, D.F.
8. Rogero, C.
9. Hueso, L.E.