Publications en collaboration avec des chercheurs de Institute of Electronics, Microelectronics and Nanotechnology (5)

2014

  1. Epitaxial hexagonal boron nitride on Ir(111): A work function template

    Physical Review B - Condensed Matter and Materials Physics, Vol. 89, Núm. 23

2010

  1. High temperature stability of nitride-based power HEMTs

    4th Microwave and Radar Week, MRW-2010 - 18th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2010 - Conference Proceedings

  2. Testing the temperature limits of GaN-based HEMT devices

    IEEE Transactions on Device and Materials Reliability, Vol. 10, Núm. 4, pp. 427-436

2007

  1. Barrier layer downscaling of InAlN/GaN HEMTs

    65th DRC Device Research Conference

  2. Characteristics of Al2O3/AlInN/GaN MOSHEMT

    Electronics Letters, Vol. 43, Núm. 12, pp. 691-692