Fernando
Plazaola Muguruza
Aalto University
Helsinki, FinlandiaPublicaciones en colaboración con investigadores/as de Aalto University (19)
2017
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Radiation-induced alloy rearrangement in InxGa1−xN
Applied Physics Letters, Vol. 110, Núm. 13
2013
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On the interplay of point defects and Cd in non-polar ZnCdO films
Journal of Applied Physics, Vol. 113, Núm. 2
2011
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Determination of defect content and defect profile in semiconductor heterostructures
Journal of Physics: Conference Series
2010
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Temperature- and illumination-induced charge-state change in divacancies of GaTe
Physical Review B - Condensed Matter and Materials Physics, Vol. 81, Núm. 19
2007
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New method for the determination of the defect profile in thin layers grown over a substrate
Physica Status Solidi (C) Current Topics in Solid State Physics
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Positron annihilation lifetime spectroscopy of ZnO bulk samples
Physical Review B - Condensed Matter and Materials Physics, Vol. 76, Núm. 8
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Positron annihilation spectroscopy for the determination of thickness and defect profile in thin semiconductor layers
Physical Review B - Condensed Matter and Materials Physics, Vol. 75, Núm. 20
2006
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Correlation between Zn vacancies and photoluminescence emission in ZnO films
Journal of Applied Physics, Vol. 99, Núm. 5
2005
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Zinc vacancies in the heteroepitaxy of ZnO on sapphire: Influence of the substrate orientation and layer thickness
Applied Physics Letters, Vol. 86, Núm. 4
2003
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Defect characterization of ZnBeSe solid solutions by means of positron annihilation and photoluminescence techniques
Journal of Applied Physics, Vol. 94, Núm. 3, pp. 1647-1653
2001
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Two-detector Doppler broadening and positron lifetime in multiphase Co-Si alloys
Materials Science Forum
2000
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Characterization of defects in (ZnMg)Se compounds by positron annihilation and photoluminescence
Journal of Applied Physics, Vol. 88, Núm. 3, pp. 1325-1332
1998
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Positron lifetime calculations of hexagonal metals with the true geometry
Physica Status Solidi (B) Basic Research, Vol. 206, Núm. 2, pp. 509-518
1986
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Detection of Ga vacancies in electron irradiated GaAs by positrons
Applied Physics Letters Applied Physics Letters, Vol. 48, Núm. 12, pp. 809-810
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POSITRON STUDY OF NATIVE VACANCIES IN DOPED AND UNDOPED GAAS
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, Vol. 19, Núm. 3, pp. 331-344
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Study of formation and reversion of Guinier-Preston zones in Al-4.5 at%Zn-x at%Mg alloys by positrons
Journal of Materials Science, Vol. 21, Núm. 3, pp. 853-858
1985
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Positron-trapping mechanism at grain boundaries
Physical Review B, Vol. 31, Núm. 11, pp. 6941-6946
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Vacancy-zn complexes in inp studied by positrons
Applied Physics Letters, Vol. 46, Núm. 12, pp. 1136-1138
1984
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POSITRON LIFETIME STUDIES OF VACANCY-HYDROGEN INTERACTIONS IN IRRADIATED NIOBIUM AND TANTALUM.
Proceedings of the Riso International Symposium on Metallurgy and Materials Science