Publicaciones en las que colabora con Vicente Muñoz Sanjosé (12)

2016

  1. Observation of a charge delocalization from Se vacancies in Bi2Se3: A positron annihilation study of native defects

    Physical Review B, Vol. 94, Núm. 1

2013

  1. On the interplay of point defects and Cd in non-polar ZnCdO films

    Journal of Applied Physics, Vol. 113, Núm. 2

2011

  1. Determination of defect content and defect profile in semiconductor heterostructures

    Journal of Physics: Conference Series

2010

  1. Temperature- and illumination-induced charge-state change in divacancies of GaTe

    Physical Review B - Condensed Matter and Materials Physics, Vol. 81, Núm. 19

2008

  1. Thermal creation of defects in GaTe

    Japanese Journal of Applied Physics, Vol. 47, Núm. 12, pp. 8719-8722

2007

  1. New method for the determination of the defect profile in thin layers grown over a substrate

    Physica Status Solidi (C) Current Topics in Solid State Physics

  2. Positron annihilation lifetime spectroscopy of ZnO bulk samples

    Physical Review B - Condensed Matter and Materials Physics, Vol. 76, Núm. 8

  3. Positron annihilation spectroscopy for the determination of thickness and defect profile in thin semiconductor layers

    Physical Review B - Condensed Matter and Materials Physics, Vol. 75, Núm. 20

2006

  1. Correlation between Zn vacancies and photoluminescence emission in ZnO films

    Journal of Applied Physics, Vol. 99, Núm. 5

2005

  1. Zinc vacancies in the heteroepitaxy of ZnO on sapphire: Influence of the substrate orientation and layer thickness

    Applied Physics Letters, Vol. 86, Núm. 4

2003

  1. Near band edge recombination mechanisms in GaTe

    Physical Review B - Condensed Matter and Materials Physics, Vol. 68, Núm. 24

2002

  1. Recombination processes in unintentionally doped GaTe single crystals

    Journal of Applied Physics, Vol. 92, Núm. 12, pp. 7330-7336