Microscopía electrónica
Institute of Electronics, Microelectronics and Nanotechnology
Villeneuve-d'Ascq, FranciaPublikationen in Zusammenarbeit mit Forschern von Institute of Electronics, Microelectronics and Nanotechnology (3)
2010
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High temperature stability of nitride-based power HEMTs
4th Microwave and Radar Week, MRW-2010 - 18th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2010 - Conference Proceedings
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Testing the temperature limits of GaN-based HEMT devices
IEEE Transactions on Device and Materials Reliability, Vol. 10, Núm. 4, pp. 427-436
2007
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Barrier layer downscaling of InAlN/GaN HEMTs
65th DRC Device Research Conference