FunThEMaS: Fundamental Theoretical and Experimental Materials Science
Hunan University
Changsha, ChinaHunan University-ko ikertzaileekin lankidetzan egindako argitalpenak (1)
2024
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High-mobility two-dimensional MA2 N4 (M = Mo, W; A = Si, Ge) family for transistors
Physical Review B, Vol. 109, Núm. 11