Engineering anisotropic magnetoresistance of Hall bars with interfacial organic layers

  1. Park, J.H.
  2. Ribeiro, M.
  3. Pham, T.K.H.
  4. Lee, N.J.
  5. Eom, T.-W.
  6. Jo, J.
  7. Park, S.-Y.
  8. Rhim, S.H.
  9. Nakamura, K.
  10. Yoo, J.-W.
  11. Kim, T.H.
Aldizkaria:
Journal of Vacuum Science and Technology B

ISSN: 2166-2754 2166-2746

Argitalpen urtea: 2020

Alea: 38

Zenbakia: 4

Mota: Artikulua

DOI: 10.1116/6.0000222 GOOGLE SCHOLAR