Gate tunability of highly efficient spin-to-charge conversion by spin Hall effect in graphene proximitized with WSe2

  1. Herling, F.
  2. Safeer, C.K.
  3. Ingla-Aynés, J.
  4. Ontoso, N.
  5. Hueso, L.E.
  6. Casanova, F.
Journal:
APL Materials

ISSN: 2166-532X

Year of publication: 2020

Volume: 8

Issue: 7

Type: Article

DOI: 10.1063/5.0006101 GOOGLE SCHOLAR lock_openOpen access editor
Data source: Scopus