Gate tunability of highly efficient spin-to-charge conversion by spin Hall effect in graphene proximitized with WSe2

  1. Herling, F.
  2. Safeer, C.K.
  3. Ingla-Aynés, J.
  4. Ontoso, N.
  5. Hueso, L.E.
  6. Casanova, F.
Zeitschrift:
APL Materials

ISSN: 2166-532X

Datum der Publikation: 2020

Ausgabe: 8

Nummer: 7

Art: Artikel

DOI: 10.1063/5.0006101 GOOGLE SCHOLAR lock_openOpen Access editor