Nanoscale residual stress-field mapping around nanoindents in SiC by IR s-SNOM and confocal Raman microscopy

  1. Gigler, A.M.
  2. Huber, A.J.
  3. Bauer, M.
  4. Ziegler, A.
  5. Hillenbrand, R.
  6. Stark, R.W.
Revue:
Optics Express

ISSN: 1094-4087

Année de publication: 2009

Volumen: 17

Número: 25

Pages: 22351-22357

Type: Article

DOI: 10.1364/OE.17.022351 GOOGLE SCHOLAR lock_openAccès ouvert editor
La source de données: Scopus