InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess

  1. Alomari, M.
  2. Medjdoub, F.
  3. Carlin, J.-F.
  4. Feltin, E.
  5. Grandjean, N.
  6. Chuvilin, A.
  7. Kaiser, U.
  8. Gaquière, C.
  9. Kohn, E.
Journal:
IEEE Electron Device Letters

ISSN: 0741-3106

Year of publication: 2009

Volume: 30

Issue: 11

Pages: 1131-1133

Type: Article

DOI: 10.1109/LED.2009.2031659 GOOGLE SCHOLAR
Data source: Scopus