Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study
- Bläsing, J.
- Krost, A.
- Hertkorn, J.
- Scholz, F.
- Kirste, L.
- Chuvilin, A.
- Kaiser, U.
Journal:
Journal of Applied Physics
ISSN: 0021-8979
Year of publication: 2009
Volume: 105
Issue: 3
Type: Article