In situ electrical characterization of palladium-based single electron transistors made by electromigration technique

  1. Arzubiaga, L.
  2. Golmar, F.
  3. Llopis, R.
  4. Casanova, F.
  5. Hueso, L.E.
Zeitschrift:
AIP Advances

ISSN: 2158-3226

Datum der Publikation: 2014

Ausgabe: 4

Nummer: 11

Art: Artikel

DOI: 10.1063/1.4902170 GOOGLE SCHOLAR lock_openOpen Access editor