Electron transport through dangling-bond silicon wires on H-passivated Si(100)

  1. Kepenekian, M.
  2. Novaes, F.D.
  3. Robles, R.
  4. Monturet, S.
  5. Kawai, H.
  6. Joachim, C.
  7. Lorente, N.
Journal:
Journal of Physics Condensed Matter

ISSN: 0953-8984,  1361-648X

Year of publication: 2013

Volume: 25

Issue: 2

Type: Article

DOI: 10.1088/0953-8984/25/2/025503 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus