Asymmetry of domain forward switching and multilevel relaxation times of domain backswitching in antiferroelectric Pb0.99 Nb0.02 (Zr0.84 Sn0.12 Ti0.04) 0.98 O3 thin films

  1. Jiang, A.Q.
  2. Lin, Y.Y.
  3. Tang, T.A.
  4. Zhang, Q.
Revista:
Applied Physics Letters

ISSN: 0003-6951

Ano de publicación: 2007

Volume: 90

Número: 14

Tipo: Artigo

DOI: 10.1063/1.2718506 GOOGLE SCHOLAR

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