Asymmetry of domain forward switching and multilevel relaxation times of domain backswitching in antiferroelectric Pb0.99 Nb0.02 (Zr0.84 Sn0.12 Ti0.04) 0.98 O3 thin films

  1. Jiang, A.Q.
  2. Lin, Y.Y.
  3. Tang, T.A.
  4. Zhang, Q.
Aldizkaria:
Applied Physics Letters

ISSN: 0003-6951

Argitalpen urtea: 2007

Alea: 90

Zenbakia: 14

Mota: Artikulua

DOI: 10.1063/1.2718506 GOOGLE SCHOLAR

Garapen Iraunkorreko Helburuak