Asymmetry of domain forward switching and multilevel relaxation times of domain backswitching in antiferroelectric Pb0.99 Nb0.02 (Zr0.84 Sn0.12 Ti0.04) 0.98 O3 thin films

  1. Jiang, A.Q.
  2. Lin, Y.Y.
  3. Tang, T.A.
  4. Zhang, Q.
Revue:
Applied Physics Letters

ISSN: 0003-6951

Année de publication: 2007

Volumen: 90

Número: 14

Type: Article

DOI: 10.1063/1.2718506 GOOGLE SCHOLAR

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