Nanosecond-range imprint and retention characterized from polarization-voltage hysteresis loops in insulating or leaky ferroelectric thin films

  1. Jiang, A.Q.
  2. Liu, X.B.
  3. Zhang, Q.
Revue:
Applied Physics Letters

ISSN: 0003-6951

Année de publication: 2011

Volumen: 99

Número: 14

Type: Article

DOI: 10.1063/1.3647577 GOOGLE SCHOLAR

Objectifs de Développement Durable