Nanosecond-range imprint and retention characterized from polarization-voltage hysteresis loops in insulating or leaky ferroelectric thin films

  1. Jiang, A.Q.
  2. Liu, X.B.
  3. Zhang, Q.
Aldizkaria:
Applied Physics Letters

ISSN: 0003-6951

Argitalpen urtea: 2011

Alea: 99

Zenbakia: 14

Mota: Artikulua

DOI: 10.1063/1.3647577 GOOGLE SCHOLAR

Garapen Iraunkorreko Helburuak