Gated-controlled rectification of a self-assembled monolayer-based transistor

  1. Mentovich, E.D.
  2. Rosenberg-Shraga, N.
  3. Kalifa, I.
  4. Gozin, M.
  5. Mujica, V.
  6. Hansen, T.
  7. Richter, S.
Revue:
Journal of Physical Chemistry C

ISSN: 1932-7447 1932-7455

Année de publication: 2013

Volumen: 117

Número: 16

Pages: 8468-8474

Type: Article

DOI: 10.1021/JP311875G GOOGLE SCHOLAR

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