HfO2 based memory devices with rectifying capabilities

  1. Quinteros, C.
  2. Zazpe, R.
  3. Marlasca, F.G.
  4. Golmar, F.
  5. Casanova, F.
  6. Stoliar, P.
  7. Hueso, L.
  8. Levy, P.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 2014

Volumen: 115

Número: 2

Type: Article

DOI: 10.1063/1.4861167 GOOGLE SCHOLAR