An artificial neuron founded on resistive switching of Mott insulators

  1. Adda, C.
  2. Tranchant, J.
  3. Stoliar, P.
  4. Corraze, B.
  5. Janod, E.
  6. Gay, R.
  7. Llopis, R.
  8. Besland, M.-P.
  9. Hueso, L.E.
  10. Cario, L.
Konferenzberichte:
2017 IEEE 9th International Memory Workshop, IMW 2017

ISBN: 9781509032723

Datum der Publikation: 2017

Art: Konferenz-Beitrag

DOI: 10.1109/IMW.2017.7939071 GOOGLE SCHOLAR