Spin transport in dangling-bond wires on doped H-passivated Si(100)

  1. Kepenekian, M.
  2. Robles, R.
  3. Rurali, R.
  4. Lorente, N.
Revue:
Nanotechnology

ISSN: 1361-6528 0957-4484

Année de publication: 2014

Volumen: 25

Número: 46

Type: Article

DOI: 10.1088/0957-4484/25/46/465703 GOOGLE SCHOLAR

Objectifs de Développement Durable